| PART |
Description |
Maker |
| FGA272-638G FGA303-638G FGAX600-638G FGA304-638G F |
272 POS 1.27MM BGA ADAPTER BGA272, IC SOCKET
303 POS 1.27MM BGA ADAPTER BGA303, IC SOCKET
600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET
304 POS 1.27MM BGA ADAPTER BGA304, IC SOCKET
168 POS 1.27MM BGA EXTRACTION ADAPTER BGA168, IC SOCKET
304 POS 1.27MM BGA EXTRACTION ADAPTER
255 POS 1.27MM BGA EXTRACTION ADAPTER
357 POS 1.27MM BGA ADAPTER
560 POS 1.27MM BGA ADAPTER
|
Advanced Interconnections, Corp.
ADVANCED INTERCONNECTIONS CORP
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| IBM25PPC405EP-3GB200C IBM25PPC405EP-3GB133C IBM25P |
32-BIT, 200 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 133.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 333.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 266.66 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
|
Electronic Theatre Controls, Inc.
|
| AS7C251MPFD18A-133BC AS7C251MPFD18A-133BCN |
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 BGA-165
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 LEAD FREE, BGA-165
|
Alliance Semiconductor, Corp.
|
| FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
|
